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Predictive Simulation of Semiconductor Processing als Buch
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Predictive Simulation of Semiconductor Processing

Status and Challenges. 'Springer Series in Materials Science'. Auflage 2004. Book. Sprache: Englisch.
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Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms e … weiterlesen
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Predictive Simulation of Semiconductor Processing als Buch

Produktdetails

Titel: Predictive Simulation of Semiconductor Processing

ISBN: 3540204814
EAN: 9783540204817
Status and Challenges.
'Springer Series in Materials Science'.
Auflage 2004.
Book.
Sprache: Englisch.
Herausgegeben von Jarek Dabrowski, Eicke R. Weber
Springer Berlin Heidelberg

5. Mai 2004 - gebunden - 516 Seiten

Beschreibung

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Inhaltsverzeichnis

1 Transistors and Atoms.- 2 Atomistic Simulations of Processes at Surfaces.- 3 Atomistic Simulations in Materials Processing.- 4 Atomistic Simulation of Decanano MOSFETs.- 5 Modeling and Simulation of Heterojunction Bipolar Transistors.- 6 Gate Oxide Reliability: Physical and Computational Models.- 7 High-K Dielectrics: The Example of Pr2O3.- 8 Atomistic Simulation of Si3N4 CVD from Dichlorosilane and NH3.- 9 Interconnects and Propagation of High Frequency Signals.- 10 Modeling of Electromigration in Interconnects.- 11 Predictive Modeling of Transition Metal Gettering: Applications and Materials Science Challenges.

Portrait

J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), "Silicon surfaces and formation of interfaces; basic science in the industrial world" (World Scientific, 2000). Editor (book) , ""Recent Developments in Vacuum Science and Technology" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr2O3) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication.

Pressestimmen

From the reviews:

"This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. ... A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work." (Current Engineering Practice, Vol. 47 (3), 2004-2005)
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