Autor/en: Steven H. Voldman
Physics and Devices.
1669:Standard B&W 6. 69 x 9. 61 in or 244 x 170 mm (Pinched Crown) Case Laminate on White w/Gloss Lam.
John Wiley & Sons
21. Oktober 2004 - gebunden - 422 Seiten
Addresses Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. This book provides a treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. It contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon.
Dr Steven H. Voldman received his B.S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T; MS Engineering Physics (1986) and Ph.D EE (1991) from the University of Vermont under IBM's Resident Study Fellow Program. At M.I.T, he worked as a member of the M.I.T. Plasma Fusion Center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability device engineer, his work include pioneering work in bipolar/ CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechanism, hot electron, epitaxy/well design, CMOS latchup, and ESD. Since 1986, he has been responsible for defining the IBM ESD/latchup strategy for CMOS, SOI, BiCMOS and RF CMOS and SiGe technologies. He has authored ESD and latchup publications in the area of MOSFET Scaling, device simulations, copper, low-k, MR heads, CMOS, SOI , Sage and SiGeC technology. Voldman served as SEMATECH ESD Working Group Chairman (1996-2000), ESD Association General Chairman and Board of Directors, International Reliability Physics (IRPS) ESD/Latchup Chairman, International Physical and Failure Analysis (IPFA) Symposium ESD Sub-Committee Chairman, ESD Association Standard Development Chairman on Transmission Line Pulse Testing, ESD Education Committee, and serves on the ISQED Committee, Taiwan ED Conference (T-ESDC) Technical Program Committee. Voldman has provided ESD lectures for universities (e.g. MIT Lecture Series, Taiwan National Chiao-Tung University, and Singapore Nanyang Technical University). He is a recipient of over 125 US patents, over 100 publications, and also provides talks on patenting, and invention. He has been featured in EE Times, Intellectual Property Law and Business and authored the first article on ESD phenomena for the October 2002 edition of Scientific American entitled Lightening Rods for Nanostructures, and Pour La Science, Le Scienze, and Swiat Nauk international editions. Dr. Voldman was recently accepted as the first IEEE Fellow for ESD phenomena in semiconductors for ' contributions to electrostatic discharge protection CMOS, SOI and SiGe technologies'.
"...this is a good device book about ESD. Many useful equations are derived and explained." (IEEE Circuits & Devices, January/February 2006)