This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.
Inhaltsverzeichnis
Advanced Silicon-Based CMOS Technologies. From Planar to Trigate and Nanowires Fully Depleted Transistors. Schottky Source/Drain MOSFETs. Advances in Silicon-On-Diamond Technology. GeOI, SiGeOI and New Devices Architectures. 3D Monolithic Integration. III-V Quantum-Well FETs. Carbon Integrated Electronics. New Paths to Augmented Silicon CMOS Technologies. Tunneling Field-Effect Transistors - Challenges and Perspectives. Molecular Memories. Resistive Memories. High frequency vibrating nanowire. Spintronics. Smart Multiphysics Sensors. 3D Integration and Wafer Level Packaging.
