Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of twenty volumes since 1963. The series contains quality studies of the properties of various thinfilms materials and systems.
In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.
- Discusses the latest research about structure, physics, and infrared photoemissive behavior of heavily doped silicon homojunctions and Ge and GaAs-based alloy junctions
- Reviews the current status of SiGe/Si quantum wells for infrared detection
- Discusses key developments in the growing research on quantum-well infrared photodetectors (QWIPs)
- Reviews Chois development of a family of novel three-terminal, multi-quantum well devices designed to improve high-temperature IR detectivity at long wavelengths
- Describes recent studies aimed at using multi-quantum well structures to achieve higher performance in solar cell devices based on materials systems
Inhaltsverzeichnis
1;Front Cover;1 2;Thin Films: Advances in Research and Development;4 3;Copyright Page;5 4;Contents;6 5;Contributors;10 6;Preface;12 7;Chapter 1. Physics and Novel Device Applications of Semiconductor Homojunctions;16 7.1;I. Introduction and Background;17 7.2;II. Homojunction Internal Photoemission IR Detectors;19 7.3;III. Other Homojunction IR Detectors;52 7.4;IV. Spontaneous Spiketrain Generation in Si Homojunctions;56 7.5;V. Summary and Future;83 7.6;References;86 8;Chapter 2. Progress of SiGe/Si Quantum Wells for Infrared Detection;92 8.1;I. Introduction;92 8.2;II. Material Considerations;94 8.3;III. Quantum Size Effects;96 8.4;IV. Intersubband Transition in p-Type SiGe/Si Quantum Wells;105 8.5;V. Intersubband Transition in p-Type d-Doped Si Quantum Wells;110 8.6;VI. Detector Design;116 8.7;VII. Detector Photoresponse;119 8.8;VIII. Summary;125 8.9;References;126 9;Chapter 3. Recent Developments in Quantum-Well Infrared Photodetectors;128 9.1;I. Introduction;129 9.2;II. Intersubband Absorption;132 9.3;III. Bound-to-Bound State QWIPs;138 9.4;IV. Bound-to-Continuum State QWIPs;141 9.5;V. Asymmetrical GaAs/AlxGa1x As QWIPs;175 9.6;VI. Single QWIPs;185 9.7;VII. Superlattice Miniband QWIPs;199 9.8;VIII. Indirect Band-Gap QWIPs;206 9.9;IX. QWIPs with Other Materials Systems;211 9.10;X. Light Coupling Methods;230 9.11;XI. Imaging Arrays;234 9.12;XII. Summary;244 9.13;References;247 10;Chapter 4. Multiquantum-Well Structures for Hot-Electron Phototransistors;254 10.1;I. Introduction;254 10.2;II. Intersubband Transitions in QWIP Structures;256 10.3;III. Excitation Hot-Electron Spectroscopy;261 10.4;IV. Infrared Hot-Electron Transistors;270 10.5;V. Multicolor QWIP and IHET;304 10.6;VI. Conclusion;322 10.7;References;323 11;Chapter 5. Quantum-Well Structures for Photovoltaic Energy Conversion;326 11.1;I. Introduction;327 11.2;II. Principles of Photovoltaics;328 11.3;III. QWSC Spectral Response;338 11.4;IV. QWSC Voltage Behavior;362 11.5;V. Limiting Efficiency of the QWSC;372
11.6;VI. Future Work and Other Novel Approaches;377 11.7;References;381 12;Author Index;384 13;Subject Index;396 14;Recent Volumes in this Serial;404
