Inhaltsverzeichnis
1;Front Cover;1 2;Lightwave Communications Technology;4 3;Copyright Page;5 4;Contents;6 5;List of Contributors;10 6;Treatise Foreword;12 7;Foreword;14 8;Preface;18 9;Chapter 1. The Liquid-Phase Epitaxial Growth of InGaAsP;22 9.1;I. Introduction;23 9.2;II. InGaAsP and InGaAs Phase Diagrams;25 9.3;III. Growth of Lattice-Matched InGaAsP and InGaAs Layers;40 9.4;IV. Growth of Misfit-Dislocation-Free Wafers;47 9.5;V. Growth Rate;57 9.6;VI. Growth of High-Purity Epitaxial Layers;83 9.7;VII. Other Features of the Growth;96 9.8;VIII. Direct Growth of InP on (111)A In0.53Ga0.47As;104 9.9;IX. Concluding Comments;108 9.10;References;110 10;Chapter 2. Molecular Beam Epitaxy for IIIV Compound Semiconductors;116 10.1;I. Historical Background of Molecular Beam Epitaxy;117 10.2;II. The Basic Molecular Beam Epitaxy Process;119 10.3;III. Growth Apparatus;125 10.4;IV. In Situ Surface Diagnostic Techniques;127 10.5;V. Substrate Preparation;137 10.6;VI. Growth Conditions for IllV Compounds;142 10.7;VII. Transport and Optical Properties of Single Layers;162 10.8;VIII. Transport and Optical Properties of Quantum Well Structures;170 10.9;IX. MBE-Grown IIIV Semiconductor Lasers;178 10.10;X. Novel Laser Structures;187 10.11;XI . Novel Photodetectors;213 10.12;XII. Concluding Remarks;222 10.13;References;224 11;Chapter 3. Organometallic Vapor-Phase Epitaxial Growth of IIIV Semiconductors;230 11.1;I. Introduction;230 11.2;II. Growth Process;235 11.3;III. Specific Materials and Devices;265 11.4;IV. Summary and Future Directions;274 11.5;References;275 12;Chapter 4. Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs;282 12.1;I. Introduction;282 12.2;II. Halide Transport;283 12.3;III. Thermodynamic Model;291 12.4;IV. Aspects of the Growth Mechanisms;312 12.5;V. Conclusion;315 12.6;Appendix;316 12.7;References;318 13;Chapter 5. Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1xAsyP1y Alloys;320 13.1;I. Introduction;320 13.2;II. Growth Technique;323 13.3;III. Gr
owth and Characterization of InP;327 13.4;IV. Growth and characterization of GaInAs;338 13.5;V. Growth and Characterization of GaInAsP;366 13.6;VI. Conclusion;393 13.7;References;396 14;Chapter 6. Defects in III V Compound Semiconductors;400 14.1;I. Introduction;400 14.2;II. Native and Process-Induced Defects in Optoelectronic Materials;406 14.3;III. Electronic Properties of Dislocations;412 14.4;IV. Degradation-Induced Defects;415 14.5;V. Conclusion;422 14.6;References;422 15;Index;426 16;Contents of Volume 22;430 17;Contents of Previous Volumes;432
