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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials als Buch

Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials

Application of High Pressure to Low-Dimensional Novel Electronic Materials. 'NATO Science Series II Mathematics,…
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Proceedings of the NATO Advanced Research Workshop, Pingree Park, CO, USA, from 10-15 June 2001


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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials als Buch


Titel: Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials

ISBN: 1402001592
EAN: 9781402001598
Application of High Pressure to Low-Dimensional Novel Electronic Materials.
'NATO Science Series II Mathematics, Physics and Chemistry'.
Auflage 2001.
Sprache: Englisch.
Herausgegeben von Peter K. Dorhout, Hans D. Hochheimer, Bogdan Kuchta
Springer Netherlands

31. Dezember 2001 - gebunden - 584 Seiten


In recent interactions with industrial companies it became quite obvious, that the search for new materials with strong anisotropic properties are of paramount importance for the development of new advanced electronic and magnetic devices. The questions concerning the tailoring of materials with large anisotropic electrical and thermal conductivity were asked over and over again. It became also quite clear that the chance to answer these questions and to find new materials which have these desired properties would demand close collaborations between scientists from different fields. Modem techniques ofcontrolled materials synthesis and advances in measurement and modeling have made clear that multiscale complexity is intrinsic to complex electronic materials, both organic and inorganic. A unified approach to classes of these materials is urgently needed, requiring interdisciplinary input from chemistry, materials science, and solid state physics. Only in this way can they be controlled and exploited for increasingly stringent demands oftechnology. The spatial and temporal complexity is driven by strong, often competing couplings between spin, charge and lattice degrees offreedom, which determine structure-function relationships. The nature of these couplings is a sensitive function of electron-electron, electron-lattice, and spin-lattice interactions; noise and disorder, external fields (magnetic, optical, pressure, etc. ), and dimensionality. In particular, these physical influences control broken-symmetry ground states (charge and spin ordered, ferroelectric, superconducting), metal-insulator transitions, and excitations with respect to broken-symmetries created by chemical- or photo-doping, especially in the form of polaronic or excitonic self-trapping.


Contributors. Preface. Acknowledgements. Evangelos Anastassakis (1938-2000). Material Synthesis at High Pressures. Stabilization of Unusual Oxidation States of Transition Metals in Oxygen Lattices: Correlations with the Induced Electronic Phenomena; G. Demazeau. Synthesis and Properties of Low dimensional F-Element Chalocogenide Compounds; P.K. Dorhout, C.R. Evenson, IV. Synthesis and High-Pressure Behavior of C6N9H3·HCl: A graphitic material with a two-dimensional C-N network; G.H. Wolf, et al. Plasma Polymerization of Thin Films Using Aniline and p-Xylene Precursors; A. Dumitru, et al. Pressure-Induced Phase Transitions. Compressibility, Pressure-Induced Amorphisation and Thermal Collapse of Zeolites; G.N. Greaves. Pressure-induced H-transfers in the networks of hydrogen bonds; A. Katrusiak. The Light Elements at High Pressure, in Layered Form, and in Combination; N.W. Ashcroft. Pressure-induced Phase Transitions in GaSe-, TlGaSe2- and CdGa2S4-type Crystals; K.R. Allakhverdiev. Influence of Pressure on the Physical Properties of Chain TlSe-type Crystals; K.R. Allakhverdiev, S.S. Ellialtiogammalu. Impendance Spectroscopy at Super High Pressures; A.N. Babushkin, et al. Optical Properties of A2CuCl4 Layer Perovskites under Pressure: Structural Correlations; F. Rodríguez, et al. The Effect of Pressure-Induced Collapse of Correlation and Hund's Rules on Structure and Electronic Properties of Transition-Metal Compounds; M. Paz-Pasternak, et al. Pressure Tuning of Condensation and Ordering of Charge-Transfer Strings; H. Cailleau, et al. From Ferroelectric to Quantum Paraelectric: Ktal-xNbxO3(KTN), a Model System; G.A.Samara. Molecular Solids Under High Pressures. Quartz like phases in CO2 at very high pressure from ab initio simulations; R. Ahuja, et al. Progress in Experimental Studies of Insulator-Metal Transitions at Multimegabar Pressures; R.J. Hemley, et al. Solid Oxygen as Low dimensional System by Spectroscopic Studies; A. Brodyanski, et al. Evolution of Rotational Spectrum in Solid Hydrogen with Pressure: Implications for Conversion and other Properties; M.A. Strzhemechny. An Influence of the Pressure on Metastability of the HCP Phase of Solid Nitrogen; B. Kuchta, et al. Semiconductors, 2-D Impurity States, Quantum Dots. X-ray Study of Strain Relaxation in Heteroepitaxial Layers of Semiconductors Annealed under High Hydrostatic Pressure; J. Bak-Misiuk. Application of High Temperature-Pressure Treatment for Investigation of Defect Creation in Basic Materials of Modern Micro-electronics: Czochralski Silicon and Solicon Containing Films; A. Misiuk. Pressure-induced Phase Transformations in Semiconductors under Contact Loading; V. Domnich, Y. Gogotsi. Far-Infrared Spectroscopy of Quasi-2D Impurity States in Semiconductor Nanostructures under High Hydrostatic Pressure; B.A. Weinstein, et al. Probing the Effects of Three-Dimensional Confinement on the Electronic Structure of InP under Hydrostatic Pressure; C.S. Menoni, et al. Pressure Studies in InGaN/GaN Quantum Wells; D. Patel, et al. Superconductivity. What High Pressure Studies Have Taught Us about High-Temperature Superconductivity; J.S. Schilling. Anisotropic Low-Dimensional Superconductors Close to an Electronic Topological Transition; G.G.N. Angilella, et al. Pressure-Induced Superconducting Phase Separation in Oxygen-Doped La2-xSrxCuO4+&dg
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