Chemical beam epitaxy is a method of growing semiconductor layers which has wide-ranging application in the international electronics and opto-electronic industries.
Die Strahlepitaxie (Chemical Beam Epitaxy) ist eine relativ neue Methode der Herstellung von Halbleiterschichten. Hier erfahren Sie alles Wichtige rund um dieses Verfahren: Ausrüstung, chemische Mechanismen, Eigenschaften verschiedener Halbleitermaterialien. Für Interessenten aus Physik, Elektronik und Elektrotechnik.
Inhaltsverzeichnis
Chemical Beam Epitaxy: An Introduction (G. Davies, et al.).
Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol).
Precursors for Chemical Beam Epitaxy (D. Bohling).
Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord).
Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy).
CBE InP-Based Materials and Devices (W. Tsang & T. Chiu).
MOMBE of Antiminides and Growth Model (H. Asahi).
Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa).
Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki).
Gas Source Molecular Beam Epitaxy (L. Goldstein).
Dopants and Dopant Incorporation (T. Whitaker & T. Martin).
Selected Area Epitaxy (H. Heinecke & G. Davies).
Chemical Beam Etching (W. Tsang & T. Chiu).
Laser-Assisted Epitaxy (H. Sugiura).
Index.
