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Produktbild: Radiation Effects in Advanced Semiconductor Materials and Devices | C. Claeys, E. Simoen
Weitere Ansicht: Radiation Effects in Advanced Semiconductor Materials and Devices | C. Claeys, E. Simoen
Produktbild: Radiation Effects in Advanced Semiconductor Materials and Devices | C. Claeys, E. Simoen

Radiation Effects in Advanced Semiconductor Materials and Devices

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In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.

Inhaltsverzeichnis

Radiation Environments and Component Selection Strategy. - Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices. - Displacement Damage in Group IV Semiconductor Materials. - Radiation Damage in GaAs. - Space Radiation Aspects of Silicon Bipolar Technologies. - Radiation Damage in Silicon MOS Devices. - GaAs Based Field Effect Transistors for Radiation-Hard Applications. - Opto-Electronic Components for Space. - Advanced Semiconductor Materials and Devices - Outlook.

Produktdetails

Erscheinungsdatum
21. August 2002
Sprache
englisch
Auflage
2002
Seitenanzahl
436
Reihe
Springer Series in Materials Science
Autor/Autorin
C. Claeys, E. Simoen
Illustrationen
XXII, 404 p.
Produktart
gebunden
Abbildungen
XXII, 404 p.
Gewicht
816 g
Größe (L/B/H)
241/160/28 mm
ISBN
9783540433934

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